Ixys
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IXTP50N085T | Ixys | TO-220-3 | MOSFET 50 Amps 85V 20.0 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:85 V,漏极连续电流:50 A,电阻汲极/源极 RDS(导通):0.023... | ||||||
IXTP50N20P | Ixys | TO-220-3 | 267 | MOSFET 50 Amps 200V 0.06 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:50 A,电阻汲... | ||||||
IXTP50N20PM | Ixys | TO-220-3 全封装,隔离接片 | 26 | MOSFET 20 Amps 200V 0.060 Ohm Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:20 A,电阻汲... | ||||||
IXTP50N25T | Ixys | TO-220-3 | MOSFET 50 Amps 250V 50 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:250 V,闸/源击穿电压:+/- 30 V,漏极连续电流:50 A,电阻汲... | ||||||
IXTP52P10P | Ixys | TO-220-3 | 549 | MOSFET -52.0 Amps -100V 0.050 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:52 A,电... | ||||||
IXTP54N30T | Ixys | TO-220-3 | MOSFET 54 Amps 300V 72 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP55N075T | Ixys | TO-220-3 | MOSFET 55 Amps 75V 17.0 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,漏极连续电流:55 A,电阻汲极/源极 RDS(导通):0.019... | ||||||
IXTP56N15T | Ixys | TO-220-3 | MOSFET 56 Amps 150V 36 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP5N50P | Ixys | TO-220-3 | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:4.8 A,电阻... | ||||||
IXTP5N60P | Ixys | TO-220-3 | MOSFET 5.0 Amps 600 V 1.6 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,漏极连续电流:5 A,电阻汲极... | ||||||
IXTP60N10T | Ixys | TO-220-3 | 44 | MOSFET MOSFET Id60 BVdass100 | ||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,漏极连续电流:60 A,电阻汲极/源极 ... | ||||||
IXTP60N20T | Ixys | TO-220-3 | 50 | MOSFET Trench POWER MOSFETs 200v, 60A | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:20 V,漏极连续电流:60 A,电阻汲极/源极... | ||||||
IXTP62N15P | Ixys | TO-220-3 | 47 | MOSFET 62 Amps 150V 0.04 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:150 V,闸/源击穿电压:+/- 20 V,漏极连续电流:62 A,电阻汲... | ||||||
IXTP64N055T | Ixys | TO-220-3 | MOSFET 64 Amps 55V 13 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:55 V,漏极连续电流:64 A,电阻汲极/源极 RDS(导通):0.013... | ||||||
IXTP6N100D2 | Ixys | TO-220-3 | MOSFET N-CH MOSFETS (D2) 1000V 6A | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP6N50D2 | Ixys | TO-220-3 | 460 | MOSFET N-CH MOSFETS (D2) 500V 6A | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP6N50P | Ixys | TO-220-3 | MOSFET 6 Amps 500V 1.1 Ohms Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:6 A,电阻汲极... | ||||||
IXTP70N075T2 | Ixys | TO-220-3 | 7 | MOSFET 70 Amps 75V 0.0120 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:75 V,闸/源击穿电压:+/- 20 V,漏极连续电流:70 A,电阻汲极... | ||||||
IXTP70N085T | Ixys | TO-220-3 | MOSFET MOSFET Id70 BVdass85 | |||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:85 V,漏极连续电流:70 A,电阻汲极/源极 R... | ||||||
IXTP72N20T | Ixys | TO-220-3 | MOSFET 72 Amps 200V 33 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... |
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