Ixys
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. |
| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IXFN90N30 | Ixys | SOT-227B | MOSFET 90 Amps 300V 0.033 Rds | ||
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：300 V，闸/源击穿电压：+/- 20 V，漏极连续电流：90 A，电阻汲... | ||||||
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IXFP102N15T | Ixys | TO-220-3 | MOSFET 102 Amps 0V | ||
| 参数：制造商：IXYS，RoHS：是，包装形式：Tube，... | ||||||
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IXFP10N60P | Ixys | TO-220-3 | 578 | MOSFET HiPERFET Id10 BVdass600 | |
| 参数：制造商：IXYS，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：+/- 30 V，漏极连... | ||||||
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IXFP10N80P | Ixys | TO-220-3 | 281 | MOSFET 10 Amps 800V 1.1 Rds | |
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：800 V，闸/源击穿电压：+/- 30 V，漏极连续电流：10 A，电阻汲... | ||||||
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IXFP12N50P | Ixys | TO-220-3 | 121 | MOSFET HiPERFET Id12 BVdass500 | |
| 参数：制造商：IXYS，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：+/- 30 V，漏极连... | ||||||
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IXFP12N50PM | Ixys | TO-220-3 | MOSFET 6 Amps 500V 2 Rds | ||
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：+/- 30 V，漏极连续电流：6 A，电阻汲极... | ||||||
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IXFP130N10T | Ixys | TO-220-3 | MOSFET 130 Amps 100V | ||
| 参数：制造商：IXYS，RoHS：是，包装形式：Tube，... | ||||||
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IXFP14N60P | Ixys | TO-220-3 | MOSFET 600V 14A | ||
| 参数：制造商：IXYS，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：+/- 30 V，漏极连... | ||||||
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IXFP16N50P | Ixys | TO-220-3 | MOSFET 500V 16A | ||
| 参数：制造商：IXYS，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：+/- 30 V，漏极连... | ||||||
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IXFP180N10T2 | Ixys | TO-220-3 | 50 | MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 180A | |
| 参数：制造商：IXYS，RoHS：是，包装形式：Tube，... | ||||||
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IXFP22N60P3 | Ixys | TO-220-3 | 1 | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | |
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：600 V，闸/源击穿电压：30 V，漏极连续电流：22 A，电阻汲极/源极... | ||||||
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IXFP3N120 | Ixys | TO-220-3 | 1,433 | MOSFET 3 Amps 1200V 4.50 Rds | |
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1200 V，闸/源击穿电压：+/- 20 V，漏极连续电流：3 A，电阻汲... | ||||||
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IXFP3N50PM | Ixys | TO-220-3 | MOSFET 2.7 Amps 500V 2.0 Ohms Rds | ||
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：+/- 30 V，漏极连续电流：2.7 A，电阻... | ||||||
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IXFP3N80 | Ixys | TO-220-3 | MOSFET 3.6 Amps 800V 3.6 Rds | ||
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：800 V，闸/源击穿电压：+/- 20 V，漏极连续电流：3.6 A，电阻... | ||||||
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IXFP4N100P | Ixys | TO-220-3 | MOSFET 4 Amps 1000V | ||
| 参数：制造商：IXYS，RoHS：是，包装形式：Tube，工厂包装数量：50，... | ||||||
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IXFP4N100Q | Ixys | TO-220-3 | 340 | MOSFET 4 Amps 1000V 2.8 Rds | |
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1000 V，闸/源击穿电压：+/- 20 V，漏极连续电流：4 A，电阻汲... | ||||||
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IXFP5N100P | Ixys | TO-220-3 | MOSFET 5 Amps 1000V | ||
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：1 KV，闸/源击穿电压：+/- 30 V，漏极连续电流：5 A，电阻汲极/... | ||||||
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IXFP5N50PM | Ixys | TO-220-3 | MOSFET 3.2 Amps 500V 1.4 Ohms Rds | ||
| 参数：制造商：IXYS，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：500 V，闸/源击穿电压：+/- 30 V，漏极连续电流：3.2 A，电阻... | ||||||
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IXFP6N120P | Ixys | TO-220-3 | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A | ||
| 参数：制造商：IXYS，RoHS：是，包装形式：Tube，... | ||||||
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IXFP76N15T2 | Ixys | TO-220-3 | 50 | MOSFET TRENCHT2 HIPERFET PWR MOSFET 150V 76A | |
| 参数：制造商：IXYS，RoHS：是，包装形式：Tube，... | ||||||
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