Ixys
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
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IXTP36P15P | Ixys | TO-220-3 | MOSFET -36.0 Amps -150V 0.110 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 150 V,闸/源击穿电压:+/- 20 V,漏极连续电流:36 A,电... | ||||||
IXTP38N15T | Ixys | TO-220-3 | MOSFET 38 Amps 150V 52 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP3N100D2 | Ixys | TO-220-3 | MOSFET N-CH MOSFETS (D2) 1000V 3A | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP3N100P | Ixys | TO-220-3 | MOSFET 3 Amps 1000V 4.8 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:3 A,电阻汲... | ||||||
IXTP3N110 | Ixys | TO-220-3 | MOSFET 3 Amps 1100V 4 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1100 V,闸/源击穿电压:+/- 20 V,漏极连续电流:3 A,电阻汲... | ||||||
IXTP3N120 | Ixys | TO-220-3 | 737 | MOSFET MOSFET Id3 BVdass1200 | ||
参数:制造商:IXYS,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1100 V,闸/源击穿电压:+/- 20 V,漏极... | ||||||
IXTP3N50D2 | Ixys | TO-220-3 | 519 | MOSFET N-CH MOSFETS (D2) 500V 3A | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP3N50P | Ixys | TO-220-3 | MOSFET 3.6 Amps 500 V 2 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:3.6 A,电阻... | ||||||
IXTP3N60P | Ixys | TO-220-3 | MOSFET 3 Amps 600V | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,漏极连续电流:3 A,电阻汲极... | ||||||
IXTP42N15T | Ixys | TO-220-3 | MOSFET 42 Amps 150V 0.045 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP42N25P | Ixys | TO-220-3 | 1 | MOSFET 42 Amps 250V 0.084 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:250 V,闸/源击穿电压:+/- 20 V,漏极连续电流:42 A,电阻汲... | ||||||
IXTP44N10T | Ixys | TO-220-3 | 3,640 | MOSFET 44 Amps 100V 25.0 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:100 V,漏极连续电流:44 A,电阻汲极/源极 RDS(导通):0.03... | ||||||
IXTP44N15T | Ixys | TO-220-3 | MOSFET 44 Amps 150V 45 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP44N25T | Ixys | TO-220-3 | MOSFET 44 Amps 250V 72 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP44N30T | Ixys | TO-220-3 | MOSFET 44 Amps 300V 85 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP44P15T | Ixys | TO-220-3 | MOSFET -44 Amps -150V 0.065 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP450P2 | Ixys | TO-220-3 | 188 | MOSFET PolarP2 Power MOSFET | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:16 A,电阻汲... | ||||||
IXTP48N20T | Ixys | TO-220-3 | MOSFET 48 Amps 200V 50 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 30 V,漏极连续电流:48 A,电阻汲... | ||||||
IXTP4N60P | Ixys | TO-220-3 | MOSFET 4.0 Amps 600 V 1.9 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,漏极连续电流:4 A,电阻汲极... | ||||||
IXTP4N80P | Ixys | TO-220-3 | MOSFET 3.5 Amps 800V 3 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 30 V,漏极连续电流:3.5 A,电阻... |
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