Ixys
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IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications. |
图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
---|---|---|---|---|---|---|
IXTP24N15T | Ixys | TO-220-3 | MOSFET 24 Amps 150V 100 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP24P085T | Ixys | TO-220-3 | 204 | MOSFET 24 Amps 85V 0.065 Rds | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP260N055T2 | Ixys | TO-220-3 | 73 | MOSFET TRENCHT2 PWR MOSFET 55V 260A | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP26P10T | Ixys | TO-220-3 | MOSFET MOSFET P-CH 200V 26A TO-220 | |||
参数:制造商:IXYS,晶体管极性:P-Channel,汲极/源极击穿电压:100 V,闸/源击穿电压:15 V,漏极连续电流:- 26 A,电阻汲极/源极 RDS(... | ||||||
IXTP26P20P | Ixys | TO-220-3 | 1,077 | MOSFET -26.0 Amps -200V 0.170 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:26 A,电... | ||||||
IXTP27N20T | Ixys | TO-220-3 | MOSFET 27 Amps 200V 100 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP28P065T | Ixys | TO-220-3 | 372 | MOSFET 28 Amps 65V 0.045 Rds | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP2N100 | Ixys | TO-220-3 | 233 | MOSFET 2 Amps 1000V 7 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:2 A,电阻汲... | ||||||
IXTP2N100P | Ixys | TO-220-3 | 120 | MOSFET 2 Amps 1000V 7.5 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1000 V,闸/源击穿电压:+/- 20 V,漏极连续电流:2 A,电阻汲... | ||||||
IXTP2N60P | Ixys | TO-220-3 | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:600 V,闸/源击穿电压:+/- 30 V,漏极连续电流:2 A,电阻汲极... | ||||||
IXTP2N80 | Ixys | TO-220-3 | MOSFET 2 Amps 800V 6.2 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 20 V,漏极连续电流:2 A,电阻汲极... | ||||||
IXTP2N80P | Ixys | TO-220-3 | MOSFET 2 Amps 800V 6 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:800 V,闸/源击穿电压:+/- 30 V,漏极连续电流:2 A,电阻汲极... | ||||||
IXTP2R4N120P | Ixys | TO-220-3 | MOSFET 2.4 Amps 1200V 7.5 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:1200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:2.4 A,电... | ||||||
IXTP2R4N50P | Ixys | TO-220-3 | MOSFET 2.4 Amps 500 V 3.5 Ohm Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:500 V,闸/源击穿电压:+/- 30 V,漏极连续电流:2.4 A,电阻... | ||||||
IXTP300N04T2 | Ixys | TO-220-3 | 133 | MOSFET 300 Amps 40V | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,... | ||||||
IXTP32N20T | Ixys | TO-220-3 | MOSFET 32 Amps 200V 78 Rds | |||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:200 V,闸/源击穿电压:+/- 20 V,漏极连续电流:32 A,电阻汲... | ||||||
IXTP32P05T | Ixys | TO-220-3 | 6,191 | MOSFET 32 Amps 50V 0.036 Rds | ||
参数:制造商:IXYS,RoHS:是,包装形式:Tube,工厂包装数量:50,... | ||||||
IXTP36N20T | Ixys | TO-220-3 | MOSFET 36 Amps 200V 60 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... | ||||||
IXTP36N30P | Ixys | TO-220-3 | 1,373 | MOSFET 36 Amps 300V 0.11 Rds | ||
参数:制造商:IXYS,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:300 V,闸/源击穿电压:+/- 30 V,漏极连续电流:36 A,电阻汲... | ||||||
IXTP36N30T | Ixys | TO-220-3 | MOSFET 36 Amps 300V 110 Rds | |||
参数:制造商:IXYS,RoHS:是,包装形式:Bulk,工厂包装数量:50,... |
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