Fairchild Semiconductor
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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FDME410NZT | Fairchild Semiconductor | 6-PowerUFDFN | MOSFET 20V N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... | ||||||
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FDME430NT | Fairchild Semiconductor | MicroFet 1.6x1.6 薄型 | MOSFET 30V N-Channel PowerTrench MOSFET | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，漏极连续电流：6 A，配置：... | ||||||
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FDME510PZT | Fairchild Semiconductor | 6-PowerUFDFN | 512 | MOSFET -20V P-Channel PowerTrench | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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FDME820NZT | Fairchild Semiconductor | MicroFet 1.6x1.6 薄型 | 20,570 | MOSFET N-channel PowerTrench MOSFET | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，漏极连续电流：9 A，电阻汲... | ||||||
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FDME905PT | Fairchild Semiconductor | 6-PowerUFDFN | 9,897 | MOSFET -12V P-Channel PowerTrench MOSFET | |
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：12 V，闸/源击穿电压：+/- 8 ... | ||||||
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FDME910PZT | Fairchild Semiconductor | MicroFet 1.6x1.6 薄型 | MOSFET P-CHAN -20V -8A 2.1W | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：-20 V，漏极连续电流：- 8 A，... | ||||||
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FDSS2407 | Fairchild Semiconductor | 8-SOIC | MOSFET SO8 DUAL PCH | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：62 V，闸/... | ||||||
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FDT1600N10ALZ | Fairchild Semiconductor | SOT-223-4 | MOSFET 100V 160mOhm SOT223 GREEN EMC | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，漏极连续电流：5.6 A，... | ||||||
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FDT3612 | Fairchild Semiconductor | TO-261-4，TO-261AA | 23,960 | MOSFET 100V NCh PowerTrench | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸... | ||||||
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FDT3612_Q | Fairchild Semiconductor | SOT-223 | MOSFET 100V NCh PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸... | ||||||
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FDT3N40TF | Fairchild Semiconductor | TO-261-4，TO-261AA | 3,890 | MOSFET 400V N-Chan UniFET | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：400 V，闸... | ||||||
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FDT434P | Fairchild Semiconductor | SOT-223-4 | MOSFET SOT-223 P-CH -20V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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FDT434P_Q | Fairchild Semiconductor | SOT-223 | MOSFET SOT-223 P-CH -20V | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... | ||||||
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FDT439N | Fairchild Semiconductor | SOT-223-4 | 10,415 | MOSFET SOT-223 N-CH 30V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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FDT439N_Q | Fairchild Semiconductor | SOT-223 | MOSFET SOT-223 N-CH 30V | ||
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 8 ... | ||||||
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FDT457N | Fairchild Semiconductor | TO-261-4，TO-261AA | 20,642 | MOSFET SOT-223 N-CH 30V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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FDT458P | Fairchild Semiconductor | SOT-223-4 | MOSFET 30V P-Ch PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... | ||||||
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FDT459N | Fairchild Semiconductor | SOT-223-4 | 378 | MOSFET SOT-223 N-CH 30V | |
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... | ||||||
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FDT461N | Fairchild Semiconductor | SOT-223-4 | MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸... | ||||||
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FDT55AN06LA0 | Fairchild Semiconductor | TO-261-4，TO-261AA | MOSFET 60V N-Channel PowerTrench | ||
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... | ||||||
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