| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|---|
|
NDB7051 |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET N-Channel FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/... |
|
NDB7052L |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 16... |
|
|
NDB7060 |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET N-Channel FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... |
|
NDB708A |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：80 V，闸/源击穿电压：+/- 20... |
|
|
NDB710A |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：100 V，闸/源击穿电压：+/- 2... |
|
NDC631N |
Fairchild Semiconductor |
SOT-23-6 细型，TSOT-23-6 |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... |
|
|
NDC631N_D87Z |
Fairchild Semiconductor |
SSOT-6 |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... |
|
NDC631N_F095 |
Fairchild Semiconductor |
SuperSOT-6 |
|
MOSFET 20V 4.1A N-CH ENHANCEMENT MODE |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/... |
|
NDC632P |
Fairchild Semiconductor |
SuperSOT?-6 |
|
MOSFET P-Channel FET LL Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... |
|
|
NDC632P_F095 |
Fairchild Semiconductor |
SuperSOT-6 |
|
MOSFET -20V -2.7A P-CH ENHANCEMENT MODE |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：20 V，闸/... |
|
|
NDC651N |
Fairchild Semiconductor |
SuperSOT?-6 |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... |
|
|
NDC651N_F095 |
Fairchild Semiconductor |
SuperSOT-6 |
|
MOSFET 30V 3.2A N-CH ENHANCEMENT MODE |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... |
|
|
NDC651N_Q |
Fairchild Semiconductor |
SSOT-6 |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/... |
|
|
NDC652P |
Fairchild Semiconductor |
SuperSOT?-6 |
|
MOSFET SO-6 P-CH LOGIC |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... |
|
|
NDC652P_F095 |
Fairchild Semiconductor |
SuperSOT-6 |
|
MOSFET -30V 2.4A P-CH ENHANCEMENT MODE |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：30 V，闸/... |
|
|
NDC652P_Q |
Fairchild Semiconductor |
SSOT-6 |
|
MOSFET SO-6 P-CH LOGIC |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，闸/源击穿电压：- 20... |
|
|
NDC7001C |
Fairchild Semiconductor |
SuperSOT?-6 |
|
MOSFET Dual N/P Channel FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
|
NDC7001C_Q |
Fairchild Semiconductor |
SSOT-6 |
|
MOSFET Dual N/P Channel FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N and P-Channel，汲极/源极击穿电压：+/- 60 V，闸/源击... |
|
|
NDC7002N_Q |
Fairchild Semiconductor |
SSOT-6 |
|
MOSFET SO-6 N-CH ENHANCE |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：20 V，漏... |
|
|
NDC7002N_SB9G007 |
Fairchild Semiconductor |
SuperSOT?-6 |
|
MOSFET 50V DUAL N-CHANNEL |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，包装形式：Reel，工厂包装数量：3000，... |
