| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|---|
|
MTP3055VL_Q |
Fairchild Semiconductor |
TO-220AB |
|
MOSFET 60V Single N-Ch |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 15... |
|
MTD2955V |
Fairchild Semiconductor |
TO-252 |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 60 V，闸/源击穿电压：+/- ... |
|
MTD3055V |
Fairchild Semiconductor |
TO-252AA |
|
MOSFET N-Channel FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... |
|
|
MTD3055VL |
Fairchild Semiconductor |
TO-252AA |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... |
|
NDB4050L |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 16... |
|
NDB4060 |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET N-Channel FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... |
|
|
NDB5060 |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 20... |
|
NDB5060L |
Fairchild Semiconductor |
TO-263-3，D2Pak（2 引线 + 接片），TO-263AB |
1,470 |
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... |
|
|
NDB6020 |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 ... |
|
|
NDB6020P |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET P-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，... |
|
NDB6020P_Q |
Fairchild Semiconductor |
TO-263 |
|
MOSFET P-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 20 V，闸/源击穿电压：+/- ... |
|
|
NDB6030 |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... |
|
|
NDB6030L |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 16... |
|
|
NDB6030PL |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET P-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 30 V，... |
|
NDB603AL |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... |
|
|
NDB6050L |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 16... |
|
NDB6060L |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/... |
|
|
NDB6060L_Q |
Fairchild Semiconductor |
TO-263AB |
|
MOSFET N-Ch LL FET Enhancement Mode |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：60 V，闸/源击穿电压：+/- 16... |
|
|
NDB7050 |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 20... |
|
|
NDB7050L |
Fairchild Semiconductor |
D2PAK（TO-263） |
|
MOSFET DISC BY MFG 2/02 |
|
| 参数：制造商：Fairchild Semiconductor，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：50 V，闸/源击穿电压：+/- 20... |
