Diodes Inc.
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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DMP3008SFG-7 | Diodes Inc. | 8-PowerVDFN | 78 | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | |
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... | ||||||
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DMP3010LK3-13 | Diodes Inc. | TO-252-3,DPak(2 引线 + 接片),SC-63 | MOSFET MOSFET BVDSS: 25V-30 V-30V TO252 T&R 2.5K | ||
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... | ||||||
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DMP3010LPS-13 | Diodes Inc. | PowerDI5060-8 | MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... | ||||||
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DMP3015LSS-13 | Diodes Inc. | 8-SO | MOSFET P-Channel 2.5W | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3020LSS-13 | Diodes Inc. | 8-SOIC(0.154",3.90mm 宽) | 5,898 | MOSFET P-Channel 2.5W | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 25... | ||||||
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DMP3028LFDE-13 | Diodes Inc. | 6-PowerUDFN | 457,393 | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | |
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 30 V,闸/源击穿电压:20 V,漏极连续电流:- 5.... | ||||||
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DMP3028LFDE-7 | Diodes Inc. | 6-PowerUDFN | 248,970 | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | |
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 30 V,闸/源击穿电压:20 V,漏极连续电流:- 5.... | ||||||
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DMP3030SN-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | 11,120 | MOSFET 30V 700mA | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 30 V,闸/源击穿电压:+/- ... | ||||||
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DMP3035LSS-13 | Diodes Inc. | 8-SOIC(0.154",3.90mm 宽) | MOSFET SINGLE P-CHANNEL | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 25... | ||||||
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DMP3035SFG-7 | Diodes Inc. | 8-PowerVDFN | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | ||
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... | ||||||
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DMP3056LDM-7 | Diodes Inc. | SOT-23-6 | 50,363 | MOSFET P-Channel 1.25W | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3056LSD-13 | Diodes Inc. | 8-SO | 16,316 | MOSFET PMOS-DUAL | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3056LSS-13 | Diodes Inc. | 8-SOIC(0.154",3.90mm 宽) | 6,029 | MOSFET PMOS SINGLE P-CHANNL 30V 7.1A | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3098L-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | 148,830 | MOSFET P-Channel 1.25W | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3098LDM-7 | Diodes Inc. | SOT-23-6 | MOSFET PMOS-SINGLE | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3098LSD-13 | Diodes Inc. | 8-SO | 2,500 | MOSFET PMOS-DUAL | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3098LSS-13 | Diodes Inc. | 8-SOIC(0.154",3.90mm 宽) | MOSFET PMOS SINGLE P-CHANNL 30V 5.3A | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3100L-7 | Diodes Inc. | SOT-23-3 | MOSFET SINGLE P-CHANNEL | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 20... | ||||||
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DMP3105LVT-7 | Diodes Inc. | SOT-23-6 细型,TSOT-23-6 | 14,900 | MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K | |
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 30 V,闸/源击穿电压:+/- ... | ||||||
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DMP3120L-7 | Diodes Inc. | TO-236-3,SC-59,SOT-23-3 | MOSFET PMOS SINGLE P-CHANNL | ||
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 12... | ||||||
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