| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
DMC2004DWK-7 |
Diodes Inc. |
SOT-363 |
280,210 |
MOSFET 250mW 20V |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:+/- 20 V,闸/源击... |
|
DMC2004LPK-7 |
Diodes Inc. |
DFN1612-6 |
7,130 |
MOSFET Complementary |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:+/- 20 V,闸/源击... |
|
DMC2004VK-7 |
Diodes Inc. |
SOT-563 |
|
MOSFET 400mW 20V |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:+/- 20 V,闸/源击... |
|
DMC2400UV-7 |
Diodes Inc. |
SOT-563 |
296,547 |
MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon |
|
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... |
|
DMG3407SSN-7 |
Diodes Inc. |
SC-59-3 |
|
MOSFET MOSFET BVDSS |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... |
|
DMG3413L-7 |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
|
MOSFET MOSFET BVDSS |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... |
|
DMG3414U-7 |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
271,740 |
MOSFET N-Ch 20V VDSS 8 Vgss 30A IDM |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:+/- 8 ... |
|
DMG3415UFY4-7 |
Diodes Inc. |
3-XFDFN |
|
MOSFET MOSFET P-CHAN. |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 16 V,漏极连续电流:- 2.5 A,电阻汲极/源极 R... |
|
DMG3420U-7 |
Diodes Inc. |
TO-236-3,SC-59,SOT-23-3 |
261,391 |
MOSFET MOSFET,N-CHANNEL |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:20 V,闸/源击穿电压:12 V,漏极连续电流:5.47 A... |
|
DMG4406LSS-13 |
Diodes Inc. |
8-SO |
|
MOSFET N-Ch ENH 30V 11mOhm 10.3A 10V VGS |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:9.3 A,电阻汲极/源极 RDS(导... |
|
DMG4407SSS-13 |
Diodes Inc. |
8-SOIC(0.154",3.90mm 宽) |
46,094 |
MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K |
|
| 参数:制造商:Diodes Inc.,RoHS:是,包装形式:Reel,... |
|
DMG4413LSS-13 |
Diodes Inc. |
8-SOIC(0.154",3.90mm 宽) |
|
MOSFET MOSFET,N-CHANNEL |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 30 V,闸/源击穿电压:20 V,漏极连续电流:- 10... |
|
DMG4435SSS-13 |
Diodes Inc. |
8-SO |
|
MOSFET MOSFET,P-CHANNEL |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... |
|
DMG4466SSS-13 |
Diodes Inc. |
8-SOIC(0.154",3.90mm 宽) |
|
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:+/- 25... |
|
DMG4466SSSL-13 |
Diodes Inc. |
8-SO |
|
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... |
|
DMG4468LFG |
Diodes Inc. |
U-DFN3030-8 |
|
MOSFET MOSFET N-CHANNEL 30V/4.83 - 7.62A |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:7.62 A,... |
|
DMG4468LFG-7 |
Diodes Inc. |
U-DFN3030-8 |
|
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,包装形式:Reel,... |
|
DMG4468LK3-13 |
Diodes Inc. |
TO-252-3,DPak(2 引线 + 接片),SC-63 |
|
MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:30 V,漏极连续电流:9.7 A,电... |
|
DMG4496SSS-13 |
Diodes Inc. |
8-SOIC(0.154",3.90mm 宽) |
82 |
MOSFET MOSFET N-CHANNEL |
|
| 参数:制造商:Diodes Inc.,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:30 V,闸/源击穿电压:25 V,漏极连续电流:... |
|
DMG4511SK4-13 |
Diodes Inc. |
TO-252-4L |
|
MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K |
|
| 参数:制造商:Diodes Inc.,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:+/- 35 V,闸/源击... |