Diodes Inc. / Zetex
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| 图片 | 型号 | 品牌 | 封装 | 数量 | 描述 | PDF资料 |
|---|---|---|---|---|---|---|
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ZXMN2B14FHTA | Diodes Inc. / Zetex | SOT-23-3 | 36,670 | MOSFET 20V N-Channel MOSFET w/low gate drive cap | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 8 ... | ||||||
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ZXMN2F30FHTA | Diodes Inc. / Zetex | TO-236-3，SC-59，SOT-23-3 | 138 | MOSFET 20V N-Channel Enhance. Mode MOSFET | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 12... | ||||||
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ZXMN2F34FHTA | Diodes Inc. / Zetex | TO-236-3，SC-59，SOT-23-3 | 504 | MOSFET 20V N-Channel Enhance. Mode MOSFET | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 12... | ||||||
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ZXMN2F34MATA | Diodes Inc. / Zetex | DFN322 | MOSFET 20V N-Channel Enhance. Mode MOSFET | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：20 V，闸/源击穿电压：+/- 12... | ||||||
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ZXMN3A01E6TA | Diodes Inc. / Zetex | SOT-23-6 | 25,445 | MOSFET 30V N-Chnl UMOS | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：过渡期间，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/-... | ||||||
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ZXMN3A01E6TC | Diodes Inc. / Zetex | SOT-23-6 | MOSFET 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A01FTA | Diodes Inc. / Zetex | TO-236-3，SC-59，SOT-23-3 | 2,590 | MOSFET 30V N-Chnl UMOS | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A01FTC | Diodes Inc. / Zetex | TO-236-3，SC-59，SOT-23-3 | MOSFET 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A01ZTA | Diodes Inc. / Zetex | TO-243AA | 57,135 | MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A | |
| 参数：制造商：Diodes Inc.，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：30 V，漏极连续电流：3.3 A，电阻汲极/源极 RDS（导... | ||||||
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ZXMN3A02N8TA | Diodes Inc. / Zetex | 8-SO | MOSFET 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：过渡期间，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/-... | ||||||
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ZXMN3A02X8TC | Diodes Inc. / Zetex | 8-MSOP | MOSFET 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A03E6TA | Diodes Inc. / Zetex | SOT-23-6 | MOSFET 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A03E6TC | Diodes Inc. / Zetex | SOT-23-6 | MOSFET 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A04DN8TC | Diodes Inc. / Zetex | 8-SO | MOSFET Dl 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A04KTC | Diodes Inc. / Zetex | U-DFN2020-6（B 类） | MOSFET N-Ch 30 Volt 18.4A | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：过渡期间，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/-... | ||||||
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ZXMN3A06DN8TA | Diodes Inc. / Zetex | 8-SO | 43 | MOSFET Dl 30V N-Chnl UMOS | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A06DN8TC | Diodes Inc. / Zetex | 8-SO | MOSFET Dl 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A06N8TA | Diodes Inc. / Zetex | 8-SO | MOSFET 30V N Chnl UMOS | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3A14FTA | Diodes Inc. / Zetex | TO-236-3，SC-59，SOT-23-3 | MOSFET N Channel | ||
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/- 20... | ||||||
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ZXMN3AM832TA | Diodes Inc. / Zetex | - | 54 | MOSFET Dl 30V N Chnl UMOS | |
| 参数：制造商：Diodes Inc.，产品种类：MOSFET，RoHS：过渡期间，晶体管极性：N-Channel，汲极/源极击穿电压：30 V，闸/源击穿电压：+/-... | ||||||
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