| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|---|
|
ALD111933MAL |
Advanced Linear Devices |
8-MSOP |
|
MOSFET Dual N-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD111933PAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual N-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD111933SAL |
Advanced Linear Devices |
8-SOIC |
500 |
MOSFET Dual N-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD1121EPA |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD1121EPAL |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD1121ESA |
Advanced Linear Devices |
SOIC-8 |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，配置... |
|
|
ALD1121ESAL |
Advanced Linear Devices |
SOIC-8 |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD1123EPC |
Advanced Linear Devices |
PDIP-16 |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD1123EPCL |
Advanced Linear Devices |
PDIP-16 |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD1123ESC |
Advanced Linear Devices |
SOIC-16 |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，配置... |
|
|
ALD1123ESCL |
Advanced Linear Devices |
SOIC-16 |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD114804APCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD114804ASCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD114804PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD114804SCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD114813PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD114813SCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD114835PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD114835SCL |
Advanced Linear Devices |
16-SOIC |
290 |
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD114904APAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
