| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|---|
|
ALD110808APCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD110808ASCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110808PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110808SCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110814PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110814SCL |
Advanced Linear Devices |
16-SOIC |
12 |
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD1108EPCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) Prog |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD1108ESCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) Prog |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD110900APAL |
Advanced Linear Devices |
8-PDIP |
46 |
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD110900ASAL |
Advanced Linear Devices |
8-SOIC |
22 |
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110900PAL |
Advanced Linear Devices |
8-PDIP |
4 |
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110900SAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110902PAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110902SAL |
Advanced Linear Devices |
8-SOIC |
40 |
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110904PAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual N-Channel EPAD |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110904SAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual N-Channel EPAD |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110908APAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110908ASAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110908PAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110908SAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
