| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|---|
|
ALD1103SB |
Advanced Linear Devices |
SOIC-14 |
|
MOSFET Dual P&N-Ch. Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
ALD1103SBL |
Advanced Linear Devices |
14-SOIC |
150 |
MOSFET Dual P&N-Ch. Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
ALD1105PBL |
Advanced Linear Devices |
14-PDIP |
221 |
MOSFET Dual P&N-Ch. Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
|
ALD1105SBL |
Advanced Linear Devices |
14-SOIC |
|
MOSFET Dual P&N-Ch. Pair |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N and P-Channel，汲极/源极击穿电压：+... |
|
ALD1106PB |
Advanced Linear Devices |
PDIP-14 |
|
MOSFET Quad N-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：12 V，闸/... |
|
|
ALD1106PBL |
Advanced Linear Devices |
14-PDIP |
584 |
MOSFET Quad N-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：12 V，闸/... |
|
|
ALD1106SB |
Advanced Linear Devices |
SOIC-14 |
|
MOSFET Quad N-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：N-Channel，汲极/源极击穿电压：13.2 V，... |
|
|
ALD1106SBL |
Advanced Linear Devices |
14-SOIC |
|
MOSFET Quad N-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：12 V，闸/... |
|
|
ALD1107PB |
Advanced Linear Devices |
PDIP-14 |
|
MOSFET Quad P-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
|
ALD1107PBL |
Advanced Linear Devices |
14-PDIP |
435 |
MOSFET Quad P-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
|
ALD1107SB |
Advanced Linear Devices |
SOIC-14 |
|
MOSFET Quad P-Channel |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：否，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
|
ALD1107SBL |
Advanced Linear Devices |
14-SOIC |
114 |
MOSFET Quad P-Channel Array |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：P-Channel，汲极/源极击穿电压：- 12 V，... |
|
ALD110800APCL |
Advanced Linear Devices |
16-PDIP |
16 |
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
ALD110800ASCL |
Advanced Linear Devices |
16-SOIC |
543 |
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110800PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110800SCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110802PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110802SCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad EPAD(R) N-Ch |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110804PCL |
Advanced Linear Devices |
16-PDIP |
|
MOSFET QUAD/DUAL N-CHANNEL |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
|
|
ALD110804SCL |
Advanced Linear Devices |
16-SOIC |
|
MOSFET Quad N-Channel EPAD |
|
| 参数：制造商：Advanced Linear Devices，产品种类：MOSFET，RoHS：是，晶体管极性：N-Channel，汲极/源极击穿电压：10 V，闸/... |
