| 图片 |
型号 |
品牌 |
封装 |
数量 |
描述 |
PDF资料 |
|
ALD1101APA |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1101APAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1101ASAL |
Advanced Linear Devices |
8-SOIC |
50 |
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1101BPAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1101BSAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm |
|
| 参数:制造商:Advanced Linear Devices,RoHS:是,包装形式:Tube,... |
|
ALD1101PA |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:10.6 V,... |
|
ALD1101PAL |
Advanced Linear Devices |
8-PDIP |
100 |
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:10.6 V,... |
|
ALD1101SA |
Advanced Linear Devices |
SOIC-8 |
|
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:否,晶体管极性:N-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1101SAL |
Advanced Linear Devices |
8-SOIC |
36 |
MOSFET Dual N-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102APA |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102APAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102ASAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102BPAL |
Advanced Linear Devices |
8-PDIP |
|
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102BSAL |
Advanced Linear Devices |
8-SOIC |
|
MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm |
|
| 参数:制造商:Advanced Linear Devices,RoHS:是,包装形式:Tube,... |
|
ALD1102PA |
Advanced Linear Devices |
PDIP-8 |
|
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102PAL |
Advanced Linear Devices |
8-PDIP |
6 |
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102SA |
Advanced Linear Devices |
SOIC-8 |
|
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:否,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1102SAL |
Advanced Linear Devices |
8-SOIC |
57 |
MOSFET Dual P-Channel Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:P-Channel,汲极/源极击穿电压:- 12 V,... |
|
ALD1103PB |
Advanced Linear Devices |
PDIP-14 |
|
MOSFET Dual P&N-Ch. Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:否,晶体管极性:N and P-Channel,汲极/源极击穿电压:+... |
|
ALD1103PBL |
Advanced Linear Devices |
14-PDIP |
|
MOSFET Dual P&N-Ch. Pair |
|
| 参数:制造商:Advanced Linear Devices,产品种类:MOSFET,RoHS:是,晶体管极性:N and P-Channel,汲极/源极击穿电压:+... |